
Industry-Leading 300 V Rad-Hard GaN FET for Higher Voltage Satellite Power Systems Now Available from EPC Space
ANDOVER, MA, UNITED STATES, June 25, 2025 /EINPresswire.com/ -- EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET …